STZT2222 STZT2222a medium power amplifier advance data n silicon epitaxial planar npn transistors n miniature plastic package for application in surface mounting circuits n general purpose mainly intended for use in medium power industrial application and for audio amplifier output stage n pnp complements are stzt2907 and stzt2907a respectively internal schematic diagram october 1995 absolute maximum ratings symbol parameter value unit STZT2222 STZT2222a v cbo collector-base voltage (i e = 0) 60 75 v v ceo collector-emitter voltage (i b = 0) 30 40 v v ebo emitter-base voltage (i c = 0) 5 6 v i c collector current 0.8 a p tot total dissipation at t c = 25 o c 1.5 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 2 3 sot-223 1/5 4 .com u datasheet
thermal data r thj-amb r thj-tab thermal resistance junction-ambient max thermal resistance junction-collecor tab max 83.3 10 o c/w o c/w mounted on a ceramic substrate area = 30 x 35 x 0.7 mm electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = rated v cbo v cb = rated v cbo t amb = 125 o c 10 10 na m a i cex collector cut-off current (v be = -3v) v ce = 60 v for STZT2222a 10 na i bex base cut-off current (v be = -3v) v ce = 60 v for STZT2222a 20 na i ebo emitter cut-off current (i e = 0) v eb = 3 v for STZT2222 for STZT2222a 30 15 na na v (br)cbo collector-base breakdown voltage (ie = 0) i c = 10 m a for STZT2222 for STZT2222a 60 75 v v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = 10 ma for STZT2222 for STZT2222a 30 40 v v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 m a for STZT2222 for STZT2222 5 6 v v v ce(sat) * collector-emitter saturation voltage i c = 150 ma i b = 15 ma for STZT2222 for STZT2222a i c = 500 ma i b = 50 ma for STZT2222 for STZT2222a 0.4 0.3 1.6 1 v v v v v be(sat) * base-emitter saturation voltage i c = 150 ma i b = 15 ma for STZT2222 for STZT2222a i c = 500 ma i b = 50 ma for STZT2222 for STZT2222a 0.6 1.3 1.2 2.6 2 v v v v h fe * dc current gain i c = 0.1 ma v ce = 10 v i c = 1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 150 ma v ce = 1 v i c = 500 ma v ce = 10 v for STZT2222 for STZT2222a i c = 10 ma v ce = 10 v t c = -55 o c for STZT2222 35 50 75 100 50 30 40 35 300 STZT2222/STZT2222a 2/5 4 .com u datasheet
electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit h fe ** small signal current gain i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 50 75 300 375 k w h ie ** input impedance i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 2 0.25 8 1.25 h re ** reverse voltage ratio i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 8 4 10 -4 h oe ** output impedance i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 5 25 35 375 s f t transition frequency i c = 10 ma v ce = 10 v f = 100 mhz for STZT2222 for STZT2222a 250 300 mhz mhz c cbo collector-base capacitance i e = 0 v cb = 10 v f = 1 mhz 8 pf c ebo emitter-base capacitance i c = 0 v eb = 0.5 v f = 1 mhz for STZT2222 for STZT2222a 30 25 pf pf nf noise figure f = 1 khz d f = 200 hz r g = 1k w i c = 0.1 ma v ce = 10 v 4db t d delay time i c = 150 ma i c1 = 15 ma v be = -0.5 v 10 ns t r rise time 25 ns t s storage time i c = 150 ma i c1 = 15 ma i b2 = 15 ma 225 ns t f fall time 60 ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % ** only for STZT2222a STZT2222/STZT2222a 3/5 4 .com u datasheet
dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c b e l a b e1 l1 f g c d l2 e4 sot223 mechanical data p008b STZT2222/STZT2222a 4/5 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . STZT2222/STZT2222a 5/5 4 .com u datasheet
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